Part Number Hot Search : 
BP210 E2108 RM188 CWX813 70001 TL064CN SI7469DP MB950EF
Product Description
Full Text Search
 

To Download TN2535 Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
 TN2535 Low Threshold
New Product
N-Channel Enhancement-Mode Vertical DMOS FETs
Ordering Information
BVDSS / BVDGS 350V * Same as SOT-89. RDS(ON) (max) 10 VGS(th) (max) 2.0V ID(ON) (min) 1.0A Order Number / Package TO-243AA* TN2535N8
Product supplied on 2000 piece carrier tape reels.
Features
Low threshold High input impedance Low input capacitance -- 125pF max. Fast switching speeds Low on resistance Free from secondary breakdown Low input and output leakage
Product marking for TO-243AA
TN5S
Where = 2-week alpha date code
Low Threshold DMOS Technology
These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally induced secondary breakdown. Supertex's vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Applications
Logic level interfaces - ideal for TTL and CMOS Solid state relays Battery operated systems Photo voltaic drives Analog switches General purpose line drivers Telecom switches
Package Option
Absolute Maximum Ratings
Drain-to-Source Voltage Drain-to-Gate Voltage Gate-to-Source Voltage Operating and Storage Temperature Soldering Temperature* * Distance of 1.6 mm from case for 10 seconds.
Note: See Package Outline section for dimensions.
BVDSS BVDGS 20V -55C to +150C 300C
G D S
D
TO-243AA (SOT-89)
11/12/01
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
1
TN2535
Thermal Characteristics
Package TO-243AA
ID (continuous)* 283mA
ID (pulsed) 1.6A
Power Dissipation @ TA = 25C 1.6W
jc
ja
IDR* 283mA
IDRM 1.6A
C/W
15
C/W
78
* ID (continuous) is limited by max rated Tj.
Mounted on FR5 board, 25mm x 25mm x 1.57mm. Significant PD increase possible on ceramic substrate.
Electrical Characteristics (@ 25C unless otherwise specified)
Symbol BVDSS VGS(th) VGS(th) IGSS IDSS ID(ON) Gate Threshold Voltage Change in VGS(th) with Temperature Gate Body Leakage Zero Gate Voltage Drain Current ON-State Drain Current 0.5 1.0 RDS(ON) Static Drain-to-Source ON-State Resistance 15 10 10 RDS(ON) GFS CISS COSS CRSS td(ON) tr td(OFF) tf VSD trr Change in RDS(ON) with Temperature Forward Transconductance Input Capacitance Common Source Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Diode Forward Voltage Drop Reverse Recovery Time 300 125 125 70 25 20 15 25 20 1.8 V ns VGS = 0V, ISD = 200mA VGS = 0V, ISD = 200mA ns VDD = 25V, ID = 200mA, RGEN = 25 pF 0.75 %/C m Parameter Min 350 1.0 2.0 -4.0 100 1.0 Typ Max Unit V V mV/C nA A A Conditions VGS = 0V, ID = 250A VGS = VDS, ID= 1mA VGS = VDS, ID= 1mA VGS = 20V, VDS = 0V VGS = 0V, VDS = Max Rating VGS = 4.5V, VDS = 25V VGS = 10V, VDS = 25V VGS = 3.0V, ID = 20mA VGS = 4.5V, ID = 100mA VGS = 10V, ID = 200mA VGS = 10V, ID = 200mA VDS = 25V, ID = 100mA
Notes: 1. All D.C. parameters 100% tested at 25C unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.) 2. All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
10V
90% INPUT
0V
PULSE GENERATOR
Rgen
10%
t(ON)
t(OFF) tr td(OFF) tF
td(ON)
VDD
10%
10%
INPUT
OUTPUT
0V
90%
90%
2
VDD
RL OUTPUT
D.U.T.
TN2535
Typical Performance Curves
Output Characteristics
2.0 1.2 VGS=10V
Saturation Characteristics
VGS = 10V 8.0V 6.0V VGS=8V 1.0 5.0V
1.6
VGS=6V
ID (Amperes)
VGS=5V 1.2
ID (Amperes)
0.8 VGS = 4.0V
0.6
VGS=4V 0.8
0.4 VGS = 3.0V 0.4 VGS=3V 0.2
0.0 0 10 20 30 40 50
0.0 0 2 4 6 8 10
VDS (Volts)
VDS (Volts)
Transconductance vs. Drain Current
0.8 V DS =15V
Power Dissipation vs. Ambient Temperature
2.0
TO-243AA T A =-55C 1.6
GFS (Siemens)
0.6
PD (Watts)
T A =25C T A =125C 0.4 0.8 1.2 1.6
1.2
0.4
0.8
0.2 0.4
0.0 0.0
0.0 0 25 50 75 100 125 150
ID (Amperes)
TA (C)
Maximum Rated Safe Operating Area
10 A 1.0
Thermal Response Characteristics
Thermal Resistance (normalized)
T
=25C
TO-243AA (Pulsed)
0.8
ID (Amperes)
1.0
0.6
TO-243AA (DC)
TO-243AA TA = 2 5
0.4
C
0.1
PD = 1 . 6 W
0.2
0.01 1 10 100 1000
0 0.001 0.01 0.1 1 10
VDS (Volts)
tp (seconds)
3
TN2535
Typical Performance Curves
1.2
BVDSS Variation with Temperature
BV @ 250A
On Resistance vs. Drain Current
20 VGS = 3V 16 12 8 4 0 0.0 VGS = 10V VGS = 4.5V
BVDSS (normalized)
1.0
0.9
0.8 -50
RDS(ON) (ohms)
1.1
0
TJ (C)
50
100
150
0.4
ID (Amperes)
0.8
1.2
1.6
2.0
Transfer Characteristics
2.0 TA = 25C 1.2 1.1 1.0 0.9 0.8 VDS = 15V 0 2
VGS(th) and RDS(ON) w/ Temperature
VGS(th) @ 1mA
2.4
ID (Amperes)
TA = -55C 1.2 0.8 0.4 0.0
TA = 125C
1.6 1.2 0.8 RDS(ON) @ 10V, 0.2A 0 0.4 150
VGS (Volts)
4
6
8
10
0.7 -50
TJ (C)
50
100
200
Capacitance vs. Drain Source Voltage
f = 1MHz
Gate Drive Dynamic Characteristics
10 8 ID = 283mA VDS=10V VDS=40V 295pF 4 2 0 0.0 92pF 0.4 0.8 1.2 1.6 2.0
C (picofarads)
150
100 CISS 50 CRSS 0 10 20 30 COSS 40
0
VGS (volts)
6
VDS (Volts)
QG (nanocoulombs)
11/12/01
(c)2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited.
4
1235 Bordeaux Drive, Sunnyvale, CA 94089 TEL: (408) 744-0100 * FAX: (408) 222-4895 www.supertex.com
RDS(ON) (normalized)
VGS(th) (normalized)
1.6
2.0


▲Up To Search▲   

 
Price & Availability of TN2535

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X